Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC/Sapphire/Silicon Processing
The Diamond Wire Triple-Station Single-Wire Cutting Machine is a fully automated precision machining system specifically designed for processing highly complex hard and brittle materials. Featuring a modular design, it integrates three independent workstations for rough cutting, precision finishing, and polishing. Equipped with a high-rigidity gantry structure and nano-grade linear motor drive system (repeat positioning accuracy ±0.5μm), the machine utilizes a single diamond wire (diameter 0.1-0.3mm) to sequentially complete multi-process machining, enabling one-stop precision manufacturing from blank to finished product. It is particularly suitable for high-end process scenarios requiring special-shaped cutting, ultra-thin wafer processing, and low surface damage, comprehensively supporting precision machining needs for semiconductor and optoelectronic materials including silicon, silicon carbide (SiC), sapphire, and quartz.
Diamond Wire Triple-Station Single-Wire Cutting Machine Technical Specifications
| Model | Three station diamond single line cutting machine |
| Maximum workpiece size | 600*600mm |
| Wire running speed | 1000 (MIX) m/min |
| Diamond wire diameter | 0.25-0.48mm |
| Line storage capacity of supply wheel | 20km |
| Cutting thickness range | 0-600mm |
| Cutting accuracy | 0.01mm |
| Vertical lifting stroke of workstation | 800mm |
| Cutting method | The material is stationary, and the diamond wire sways and descends |
| Cutting feed speed | 0.01-10mm/min (According to the material and thickness) |
| Water tank | 150L |
| Cutting fluid | Anti rust high-efficiency cutting fluid |
| Swing angle | ±10° |
| Swing speed | 25°/s |
| Maximum cutting tension | 88.0N (Set minimum unit0.1n) |
| Cutting depth | 200~600mm |
| Make corresponding connecting plates according to the customer's cutting range | - |
| Workstation | 3 |
| Power supply | Three phase five wire AC380V/50Hz |
| Total power of machine tool | ≤32kw |
| Main motor | 1*2kw |
| Wiring motor | 1*2kw |
| Workbench swing motor | 0.4*6kw |
| Tension control motor | 4.4*2kw |
| Wire release and collection motor | 5.5*2kw |
| External dimensions (excluding rocker arm box) | 4859*2190*2184mm |
| External dimensions (including rocker arm box) | 4859*2190*2184mm |
| Machine weight | 3600ka |
Diamond Wire Triple-Station Single-Wire Cutting Machine Working Principle
1. Three-Station Collaborative Operation:
- Station A (Rough Cutting): High-speed cutting (1-2m/s) for rapid shaping, leaving 0.05mm allowance.
- Station B (Precision Finishing): Low-speed precision trimming (0.5m/s) with accuracy up to ±0.01mm.
- Station C (Polishing): Chemical mechanical polishing (CMP) or laser treatment achieves surface roughness Ra<0.2μm.
2. Intelligent Control System:
- PLC-based synchronization ensures seamless process transitions.
- Machine vision positioning (5μm accuracy) automatically calibrates cutting paths.
Diamond Wire Triple-Station Single-Wire Cutting Machine Features and Compatible Materials
| Feature | Description | Material Characteristics |
| Three-Process Integration | Reduces workpiece handling, lowering contamination rate by 90% | Silicon (ultra-thin wafers <50μm), SiC (high hardness) |
| High-Precision Special-Shaped Cutting | Supports complex shapes (arcs/bevels) with profile accuracy ±0.02mm | Sapphire (optical grade), quartz (low thermal expansion) |
| Adaptive Tension Control | Real-time wire tension adjustment (20-50N) prevents breakage | Ceramics (AlN/Al₂O₃), composite substrates |
| Multi-Material Compatibility | Quick parameter switching for different materials | Special crystals (LiNbO₃), CVD diamond |
Diamond Wire Triple-Station Single-Wire Cutting Machine Technical Advantages
- Efficiency: Three-station continuous processing reduces cycle time by 40%.
- Quality: Polishing station achieves surface damage layer <10nm, improving device performance by 20%.
- Flexibility: Independent station operation adapts to R&D and small-batch needs.
- Intelligence: IoT data tracking with real-time monitoring of cutting force and temperature.
Diamond Wire Triple-Station Single-Wire Cutting Machine core application areas
1. Semiconductor Power Device Manufacturing:
- SiC MOSFET Trench Processing: Three-station collaboration first rough-cuts trench profiles, then precision-finishes sidewalls (±0.1° angle tolerance), and finally polishes to achieve trench surface roughness Ra<10nm, significantly enhancing switching performance.
- Ultra-Thin IGBT Wafer Dicing: For silicon wafers <50μm thick, "descending + oscillating" composite cutting technology controls chipping to <5μm with >99.8% yield.
2. Consumer Electronics Optical Components:
- 3D Curved Sapphire Cover Processing: Rough-cuts basic contours, precision-finishes curved surfaces (radius R0.5mm±0.01mm), and polishes to achieve >93% transmittance for smartphone camera modules and smartwatch screens.
- Micro-Prism Array Fabrication: Processes micron-level prism structures (50-200μm depth) on quartz glass, ensuring array pitch error <1μm.
3. Advanced Research & Special Engineering:
- Fusion Device Window Material Processing: Special-shaped cutting of CVD diamond (0.3-1mm thickness) avoids graphitization, maintaining thermal conductivity >2000W/m·K.
- Aerospace Ceramic Thermal Protection Components: Microchannel cutting (0.1mm width/1mm depth) on AlN substrates achieves channel wall roughness Ra<0.1μm, reducing fluid resistance.
Diamond Wire Triple-Station Single-Wire Cutting Machine FAQ
1. Q: What are the benefits of 3-station diamond wire cutting?
A: It combines rough cutting, precision finishing, and polishing in one system, reducing processing time by 40% and improving surface quality (Ra<0.2μm).
2. Q: Which materials can be processed with this machine?
A: Hard/brittle materials like SiC, sapphire, silicon, quartz, and ceramics with ±0.01mm precision.
Tags: #Diamond Wire Triple-Station Single-Wire Cutting Machine, #SiC/Sapphire/Silicon Processing
